Solution-deposited GdCeO_x thin films: Microstructure, band structure, and dielectric property

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• 作者：Myung Soo Lee^a ; Sang Han Park^b ; Mann-Ho Cho^b ; Hyoungsub Kim^a ; ^{hsubkim@skku.edu}
• 关键词：A. Oxides ; A. Thin films ; B. Sol&ndash ; gel chemistry ; B. Dielectric properties
• 刊名：Materials Research Bulletin
• 出版年：2012
• 期刊代码：60_00255408
• 类别：ms
• 出版时间：June, 2012
• 卷：47
• 期：6
• 页码：1423-1427
• 文件大小：889 K

摘要

The microstructural and electrical properties of solution-deposited GdCeO_x dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd₂O₃ film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO_x film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.