Band structure analysis in SiGe nanowires

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• 作者：Michele Amato^a ; ^b  ; [Author Vitae] ; Maurizia Palummo^c ; ^d  ; [Author Vitae] ; Stefano Ossicini^a ; ^b ; ^c ; ^e ; ^{stefano.ossicini@unimore.it}  ; [Author Vitae]
• 关键词：Silicon-germanium nanowires ; Band structure ; Band offset ; Composition ; DFT ; Diameter
• 刊名：Materials Science and Engineering ; B
• 出版年：2012
• 期刊代码：76_09215107
• 类别：ch
• 出版时间：5 June, 2012
• 卷：177
• 期：10
• 页码：705-711
• 文件大小：1665 K

摘要

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.