Valence band offset at GaN/尾-Si₃N₄ and 尾-Si₃N₄/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

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• 作者：Mahesh Kumar^a ; ^b ; Basanta Roul^a ; ^b ; Thirumaleshwara N. Bhat^a ; Mohana K. Rajpalke^a ; A.T. Kalghatgi^b ; S.B. Krupanidhi^a ; ^{sbk@mrc.iisc.ernet.in}
• 关键词：Nitrides ; Molecular beam epitaxy ; X-ray photo-emission spectroscopy
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：31 May, 2012
• 卷：520
• 期：15
• 页码：4911-4915
• 文件大小：655 K

摘要

Ultra thin films of pure 尾-Si₃N₄ (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of nitrogen atoms. Using 尾-Si₃N₄ layer as a buffer layer, GaN epilayers were grown on Si (111) substrate by plasma-assisted molecular beam epitaxy. The valence band offset (VBO) of GaN/尾-Si₃N₄/Si heterojunctions is determined by X-ray photoemission spectroscopy. The VBO at the 尾-Si3N4 / Si interface was determined by valence-band photoelectron spectra to be 1.84 eV. The valence band of GaN is found to be 0.41 卤 0.05 eV below that of 尾-Si₃N₄ and a type-II heterojunction. The conduction band offset was deduced to be ~ 2.36 eV, and a change of the interface dipole of 1.29 eV was observed for GaN/尾-Si₃N₄ interface formation.