Valence number transition and silicate formation of cerium oxide films on Si(100)

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• 作者：M. Mamatrishat^a ; M. Kouda^a ; K. Kakushima^b ; ^{kakushima@ep.titech.ac.jp} ; H. Nohira^c ; P. Ahmet^a ; Y. Kataoka^b ; A. Nishiyama^b ; K. Tsutsui^b ; N. Sugii^b ; K. Natori^a ; T. Hattori^a ; H. Iwai^a
• 关键词：High-k ; X-ray photoelectron spectroscopy ; Cerium oxide ; Valence number ; Silicate ; Band structure
• 刊名：Vacuum
• 出版年：2012
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：27 April, 2012
• 卷：86
• 期：10
• 页码：1513-1516
• 文件大小：999 K

摘要

Interface reactions of a Ce-oxide layer with Si(100) wafers have been characterized by X-ray photoelectron spectroscopy. The ratio of Ce atoms in Ce³⁺ states within the Ce-oxide layer has been found to decrease from 47%at as-deposited sample to 26%after annealing. From detailed reaction analysis of valence number transitions of Ce atoms and the creation of SiO₂ layer at the interface, the reacted Ce³⁺ atoms are converted into silicates and Ce⁴⁺ with a ratio of 2:1. The energy bandgap of Ce-silicate layer has been determined as 7.67聽eV and the valence band offset with respect to Si(100) wafer has been extracted as 4.35聽eV.