Synchrotron X-ray diffraction study of ZnTe at high pressure
- 作者：A. Onodera ; A. Ohtani ; S. Tsuduki ; O. Shimomura
- 关键词：A. Semiconductors ; C. X-ray scattering ; D. Crystal binding and equation of state ; D. Phase transitions
- 刊名：Solid State Communications
- 出版年：2008
- 期刊代码：101_00381098
- 类别：ms
- 出版时间：February 2008
- 卷：145
- 期：7-8
- 页码：374-378
- 文件大小：325 K
摘要
ZnTe has been studied at high pressure to 76 GPa and at room temperature in a diamond-anvil cell using angle-dispersive X-ray diffraction technique with synchrotron radiation and an imaging plate detector. The equation-of-state parameters of the two high-pressure phases of ZnTe were for the first time derived to be 
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