Effects of inhomogeneous distribution of Si-Nc and Er ions on optical amplification in Si-Nc Er doped fiber

详细信息	查看全文 | 推荐本文 |

• 作者：A. Meidanchi^a ; A. SalmanOgli^b ; ^{tirdad.zey@gmail.com}
• 关键词：Confined carrier absorption cross-section (CCa) ; Silicon nanocrystal (Si&ndash ; Nc) ; Er-doped optical amplifier (EDFA) ; Wavelength division multiplexing (WDM)
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2012
• 期刊代码：13_00304026
• 类别：et
• 出版时间：July, 2012
• 卷：123
• 期：13
• 页码：1140-1145
• 文件大小：589 K

摘要

In this article, the effects of Si-Nc and Er³⁺ ions distribution parameters including inhomogeneous and homogeneous distribution profile are studied on the optical parameters such as gain, population inversion and Si-Nc induced losses. We have shown that by increasing of the concentration of Si-Nc particles the net gain and induced Si-Nc losses increased in homogeneous and inhomogeneous distributions. In practice, the homogeneous distribution of Er ions and Si-Nc is hard to be realized. Therefore, the inhomogeneous distributions of ions cased to perturb state in mode shape of optical signal then the investigations of those effects are important for high speed optical communications. In this article, a method for evaluation of the effects of inhomogeneous distribution of impurities on performance of optical amplifier is developed and the managing of the gain with use of suitable distribution functions is proposed.