Thermal stability of sputtered Mo/polyimide films and formation of MoSe₂ and MoS₂ layers for application in flexible Cu(In,Ga)(Se,S)₂ based solar cells

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• 作者：A. Bollero^a ; ^{alberto.bollero@imdea.org} ; L. Kaupmees^b ; T. Raadik^b ; M. Grossberg^b ; S. Ferná ; ndez^a
• 关键词：Mo ; MoSe2 ; MoS2 ; CIGS ; Solar cells
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：2 April, 2012
• 卷：520
• 期：12
• 页码：4163-4168
• 文件大小：1431 K

摘要

Molybdenum (Mo) films with a thickness of about 800 nm were room temperature sputtered onto flexible polymeric substrates. Upilex庐 films were chosen as substrates on the basis of their high thermal endurance and reduced coefficient of thermal expansion. Thermal stability of Mo films has been proved by heat treatment of the Mo/Upilex庐 structures at a temperature comparable to that used in the preparation of the Cu(In,Ga)(Se,S)₂ absorber layer. A combination of high optical reflectance (maximum values of 75-80%), low electrical resistivity (about 30 渭惟 cm) and a smooth surface free of cracks for heated films highlights their good thermal stability. The formation of MoSe₂ and MoS₂ layers, after selenization/sulfurization of the Mo/Upilex庐 structures, has been further investigated in view of their application as back contact layers in flexible CIGS based solar cells.