An XPS study on ion beam induced oxidation of titanium silicide

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• 作者：P. Osiceanu
• 关键词：Titanium silicide ; Ion beam oxidation ; XPS depth profiling ; Oxidized altered layer ; “ ; In depth” ; chemical states ; Titanium reactivity
• 刊名：Applied Surface Science
• 出版年：2006
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：31 October 2006
• 卷：253
• 期：1
• 页码：381-384
• 文件大小：204 K

摘要

Titanium silicides (TiSi₂) films grown on Si(1 0 0) substrate were investigated by ex situ XPS depth profiling after athermal ion beam induced oxidation (IBO) at 12 keV O₂p>+p> incident energy and normal incidence. The composition and stoichiometry of these films were quantitatively determined as chemical state relative concentrations versus sputter time. “In depth” silicon and titanium oxidation states have been obtained after spectra deconvolution, showing a mixture of silicon dioxide, titanium dioxide, titanium suboxides, elemental titanium and residual traces of titanium nitride. Thermochemical data based on the corresponding enthalpies of formation of the oxides cannot explain our experimental results as in the case of low energy IBO, an oxygen defective altered layer is formed, presenting features of a reduced TiO_x phase.