Stoichiometry changes during low energy oxygen bombardment

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• 作者：Brijs ; B. ; De Coster ; W. ; Bender ; H. ; Storm ; W. ; Vandervorst ; W. ; Osiceanu ; P.
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：1995
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：May, 1995
• 卷：99
• 期：1-4
• 页码：614-618
• 文件大小：435 K

摘要

A basic understanding of the sputter induced artifacts during low energy oxygen ion beam bombardment is of great importance for a correct evaluation of the results of sputter depth profiling in SIMS. In this paper the sputter depth profiling of Si, CoSi₂ and TiSi₂ under normal oxygen bombardment has been investigated. With the combined sputter/RBS set-up and in combination with ex-situ XPS measurements, the oxidation and near-surface compositional changes in the transient region have been explained.