Frequency and voltage dependence of negative capacitance in Au/SiO<sub>2sub>/n-GaAs structures
- 作者：M. Gö ; kç ; en<sup>asup><sup> ; sup><sup>muharremgokcen@duzce.edu.trsup><sup> ; sup><sup>mgokcen20@hotmail.comsup> ; H. Altunta艧<sup>bsup> ; 艦. Alt谋ndal<sup>csup> ; S. Ö ; zç ; elik<sup>csup>
- 关键词：Au/SiO2/n-GaAs structures ; Negative capacitance ; Dielectric properties ; Frequency dependence ; Voltage dependence
- 刊名：Materials Science in Semiconductor Processing
- 出版年：2012
- 期刊代码：65_13698001
- 类别：ms
- 出版时间：February, 2012
- 卷：15
- 期：1
- 页码：41-46
- 文件大小：285 K
摘要
The frequency (f) and bias voltage (V) dependence of electrical and dielectric properties of Au/SiO<sub>2sub>/n-GaAs structures have been investigated in the frequency range of 10 kHz-3 MHz at room temperature by considering the presence of series resistance (R<sub>ssub>). The values of R<sub>ssub>, dielectric constant (蔚鈥?/em>), dielectric loss (蔚鈥?/em>) and dielectric loss tangent (tan 未) of these structures were obtained from capacitance-voltage (C-V) and conductance-voltage (G/蠅-V) measurements and these parameters were found to be strong functions of frequency and bias voltage. In the forward bias region, C-V plots show a negative capacitance (NC) behavior, hence 蔚鈥测€揤 plots for each frequency value take negative values as well. Such negative values of C correspond to the maximum of the conductance (G/蠅). The crosssection of the C-V plots appears as an abnormality when compared to the conventional behavior of ideal Schottky barrier diode (SBD), metal-insulator-semiconductor (MIS) and metal-oxide-semiconductor (MOS) structures. Such behavior of C and 蔚鈥?/em> has been explained with the minority-carrier injection and relaxation theory. Experimental results show that the dielectric properties of these structures are quite sensitive to frequency and applied bias voltage especially at low frequencies because of continuous density distribution of interface states and their relaxation time.