Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

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• 作者：J.M. Rafí ; E. Simoen ; A. Mercha ; K. Hayama ; F. Campabadal ; H. Ohyama ; C. Claeys
• 关键词：Silicon on insulator ; Partially-depleted SOI ; Hot-carrier degradation ; Radiation-induced damage ; MOSFETs
• 刊名：Microelectronic Engineering
• 出版年：2007
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：September-October 2007
• 卷：84
• 期：9-10
• 页码：2081-2084
• 文件大小：998 K

摘要

The effect of hot-carrier stress on 60 MeV proton irradiated thin gate oxide partially depleted SOI nMOSFETs has been studied. The results are compared with those from the electrical stress of non-irradiated devices. Whereas no significant differences are observed for the front channel degradation, hot-electron trapping in the buried oxide is found to be enhanced in the irradiated devices. This hot-electron trapping leads to a compensation or neutralization of the effects caused by the radiation-induced positive trapped charges. It is shown that a similar hot-electron trapping enhancement can be achieved in non-irradiated devices stressed under certain back gate bias conditions.