Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect

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• 作者：C.H. Chena^a ; J.B. Kuo^a ; ^{jbkuo@cc.ee.ntu.edu.tw} ; D. Chen^b ; C.S. Yeh^b
• 关键词：SOI ; Partially depleted ; Floating body effect
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：April, 2012
• 卷：70
• 期：Complete
• 页码：3-7
• 文件大小：933 K

摘要

This paper reports the function of the parasitic bipolar device in the 40 nm PD SOI NMOS device with the floating body effect. Using a unique extraction method, the function of the parasitic bipolar device during DC and transient operations could be modelled. During the turn-on transient by imposing a step voltage from 0 V to 2 V on the gate, the case with the a slower rise time shows a relatively faster turn-on in the drain current due to a stronger function of the parasitic bipolar device from smaller displacement currents through the gate oxide, as reflected in the current gain, as verified by the experimentally measured result.