Growth mechanism and characterisation of chemically grown Sb doped Bib>2b>Seb>3b> thin films

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• 作者：N.S. Patil ; A.M. Sargar ; S.R. Mane ; P.N. Bhosale
• 关键词：Thin Films ; Bib>2− ; xb>Sbb>xb>Seb>3b> ; XRD ; SEM
• 刊名：Applied Surface Science
• 出版年：2008
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 June 2008
• 卷：254
• 期：16
• 页码：5261-5265
• 文件大小：767 K

摘要

The synthesis of combinatorial Bib>2−xb>Sbb>xb>Seb>3b> thin films by arrested precipitation technique (APT) using triethanolamine-bismuth, triethanolamine-antimony and sodium selenosulphite as sources of Bi³⁺, Sb³⁺ and Se²⁻, respectively is investigated on commercial glass substrates. The growth mechanism of film formation, composition and surface morphology of the as deposited films were studied as a function of preparative parameters and bath composition. The films were monophasic, polycrystalline and covered the surface of the substrate completely. Energy dispersive X-ray analysis gave coherent elemental composition indicating single phase BiSbSeb>3b> was made. The good results obtained for Bib>2−xb>Sbb>xb>Seb>3b> thin films revealed that arrested precipitation technique is best suited for the deposition of large area thin films on conducting/nonconducting substrates to produce materials for device applications.