Y₂O₃ thin films: internal stress and microstructure

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• 作者：Gaboriaud ; R.J. ; Paumier ; F. ; Pailloux ; F. ; Guerin ; P.
• 关键词：Yttrium oxide ; Thin films ; Microstructure ; Stress ; Oxide gate
• 刊名：Materials Science and Engineering ; B
• 出版年：2004
• 期刊代码：76_09215107
• 类别：ch
• 出版时间：June 15, 2004
• 卷：109
• 期：1-3
• 页码：34-38
• 文件大小：363 K

摘要

Thin films of yttrium oxide, Y₂O₃, were deposited on Si (100), MgO and SrTiO₃ substrates by ion beam sputtering. The as-deposited samples are under a strong compressive stress whatever the substrates are. Furthermore the in-plane (222) or (400) Bragg peaks are shifted and non-symmetric. The high-resolution transmission electron microscopy investigations on the epitaxially grown Y₂O₃ thin films lead to the conclusion that the ion beam deposition process promotes a strong disorder on the oxygen network. The crystallographic symmetry of the Y₂O₃ structure which is Th7 becomes a fluorite related symmetry which is Fm3m. Annealing treatments or deposition involving a secondary ion beam assisted deposition process re-orders the Fm3m structure which comes back to the equilibrium Th7 symmetry.