Characterisation of Y₂O₃ thin films deposited by laser ablation on MgO: why a biaxial epitaxy

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• 作者：Gaboriaud ; R.J. ; Pailloux ; F. ; Paumier ; F.
• 关键词：Heteroepitaxy ; Stress ; Dislocations ; Thin films ; Oxides ; Y₂O₃
• 刊名：Applied Surface Science
• 出版年：2002
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：March 13, 2002
• 卷：188
• 期：1-2
• 页码：29-35
• 文件大小：319 K

摘要

Yttrium oxide, Y₂O₃, thin films are deposited in situ at 700°C by laser ablation on MgO substrate. Orientation relationships are studied by means of asymmetric X-ray diffraction and HRTEM investigations. A particular attention is paid to the growth of the (100) orientation of the oxide which seems to be strongly related to the oxygen partial pressure in the deposition chamber. An explanation in terms of a particular dislocation configuration is proposed. This configuration is linked to the oxygen partial pressure through the atom mobility in the thin oxide film.