Structural and Physical Characteristics of PECVD Nanocrystalline Silicon Carbide Thin Films

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• 作者：J. Huran^a ; ^{elekhura@savba.sk} ; A. Valovič ; ^a ; A.P. Kobzev^b ; N.I. Balalykin^b ; M. Kuč ; era^a ; Š ; . Haš ; č ; í ; k^a ; Ľ ; . Malinovský ; ^c ; E. Ková ; č ; ová ; ^a
• 关键词：plasma deposition ; nanocrystalline silicon carbide
• 刊名：Physics Procedia
• 出版年：2012
• 期刊代码：P128_18753892
• 类别：ph
• 出版时间：2012
• 卷：32
• 期：Complete
• 页码：303-307
• 文件大小：711 K

摘要

Nanocrystalline silicon carbide was prepared by PECVD technology in capacitively parallel plate plasma reactor, where both silane and methane were introduced into the plasma reactor. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was assessed by AFM. The RBS results showed the main concentrations of Si and C in the films. The concentration of hydrogen was approximately 20 at.%. IR results showed the presence of Si-C, Si-O, Si-N, Si-H, N-H, C-H, C-N specific bonds. The AFM micrographs revealed the film surface smooth and compact. Results of I-V measurements before and after samples irradiation by neutrons are presented.