Efficiency enhancement of silicon solar cells with silicon nanocrystals embedded in PECVD silicon nitride matrix

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• 作者：William R. Taube^a ; ^{williamtaube@gmail.com} ; A. Kumar^a ; R. Saravanan^a ; P.B. Agarwal^a ; P. Kothari^a ; B.C. Joshi^a ; D. Kumar^b
• 关键词：Downconversion ; Silicon-rich-nitride ; PECVD ; Silicon nanostructures ; Silicon solar cell ; Photoluminescence
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 期刊代码：81_09270248
• 类别：ce
• 出版时间：June, 2012
• 卷：101
• 期：Complete
• 页码：32-35
• 文件大小：702 K

摘要

Anti reflection coatings (ARC), comprising of silicon-rich-nitride (SRN) films embedded with downconverting silicon nanocrystals were integrated into monocrystalline silicon solar cells fabricated using standard semiconductor fabrication techniques, and their effects were studied. Two types of ARC layers, one with single layer SRN film and other with double layer SiO_x/SRN were deposited by plasma enhanced chemical vapor deposition (PECVD) during fabrication of silicon solar cells and thermally annealed to precipitate silicon nanocrystals. A relative increase in power conversion efficiency of 15.6%for single layer nanocrystals-embedded-ARC and 22.8%for double layer nanocrystals-embedded-ARC were observed compared to a reference cell.