Interface properties and electronic structure of ultrathin manganese oxide films on Ag(0 0 1)
- 作者：M. Nagel ; I. Biswas ; H. Peisert ; T. Chassé
- 关键词：Ultrathin film ; Transition metal oxide ; Near edge extended X-ray absorption fine structure ; Soft X-ray photoelectron spectroscopy ; Low energy electron diffraction ; Epitaxial growth ; Metal oxide interface
- 刊名：Surface Science
- 出版年：2007
- 期刊代码：104_00396028
- 类别：ch
- 出版时间：15 September 2007
- 卷：601
- 期：18
- 页码：4484-4487
- 文件大小：367 K
摘要
Ultrathin manganese monoxide films on silver single crystal substrates are studied as a function of the thickness using X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). It was found that electronic and geometric properties in ultrathin films differ from the bulk. A tetragonal distortion of the oxide films is revealed by polarisation-dependent X-ray absorption measurements: the extent decreases with increasing film thickness. A structural relaxation of epitaxial oxide layers induced by heating also leads to a decrease of the tetragonal interface strain. The electronic structure of ultrathin manganese oxide films in the valence band region is very similar to that in the bulk oxide.