Characteristics of high Al content Alb>xb>Gab>1−b>b>xb>N grown by metalorganic chemical vapor deposition

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• 作者：Xiaoyan Wang ; Xiaoliang Wang ; Guoxin Hu ; Baozhu Wang ; Zhiyong Ma ; Hongling Xiao ; Cuimei Wang ; Junxue Ran ; Jianping Li
• 关键词：Alb>xb>Gab>1− ; b>b>xb>N ; MOCVD ; High Al content ; Photodetector
• 刊名：Microelectronics Journal
• 出版年：2007
• 期刊代码：72_00262692
• 类别：ms
• 出版时间：August-September 2007
• 卷：38
• 期：8-9
• 页码：838-841
• 文件大小：325 K

摘要

The epitaxial growth of Alb>xb>Gab>1−b>b>xb>N film with high Al content by metalorganic chemical vapor deposition (MOCVD) has been accomplished. The resulting Al content was determined to be 54%by high resolution X-ray diffraction (HRXRD) and Vegard's law. The full width at half maximum (FWHM) of the AlGaN (0002) HRXRD rocking curve was about 597 arcsec. Atomic force microscopy (AFM) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed Al-species. From transmittance measurement, the cut-off wavelength was around 280 nm and Fabry–Perot fringes were clearly visible in the transmission region. Cathodoluminescence (CL) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction.