Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

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• 作者：Anh-Tuan Pham^a ; ^{phamtuan2005@yahoo.com} ; Bart Soré ; e^a ; ^b ; Wim Magnus^a ; ^b ; Christoph Jungemann^c ; Bernd Meinerzhagen^d ; Geoffrey Pourtois^a
• 关键词：Junctionless transistors ; Nanowire ; Crystallographic orientation ; Strain ; Size quantization
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：May, 2012
• 卷：71
• 期：Complete
• 页码：30-36
• 文件大小：1438 K

摘要

Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schr枚dinger equations. The 6 脳 6 k路p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C-V curve is systematically studied.