Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
- 作者：Zhiwei Li ; lizhiwei@semi.ac.cn ; Hongyuan Wei ; Xiaoqing Xu ; Guijuan Zhao ; Xianglin Liu ; Shaoyan Yang ; Qinsheng Zhu ; Zhanguo Wang
- 关键词：A3. MOCVD ; B1. a-plane GaN ; B1. Nitrides ; B2. Semi-conducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2012
- 期刊代码：49_00220248
- 类别：ch
- 出版时间：1 June, 2012
- 卷：348
- 期：1
- 页码：10-14
- 文件大小：863 K
摘要
We report on the use of a novel technique to grow the nonpolar a-plane GaN on r-plane sapphire by metal-organic chemical vapor deposition. A thin InGaN interlayer was deposited on the substrate followed by a low temperature (LT) GaN buffer layer. A stripe-like template was obtained by annealing the LT GaN/InGaN layers at 1100 掳C for 2 min. This special template facilitated the nanoscale epitaxial lateral overgrowth of a-plane GaN. Scanning electron microscopy shows that the surface morphology was rather flat for a 1 渭m-thick sample. The improvement in crystalline quality was also demonstrated by high-resolution x-ray diffraction, room temperature Raman spectroscopy and photoluminescence measurements. Compared with the traditional epitaxial lateral overgrowth technique, our technique greatly simplified the template preparing process and the crystalline quality of a-plane GaN was improved.