A role of parameters in RF PA CVD technology of a-C:N:H layers
- 作者：Karol Kyzioł ; Stanisł ; awa Jonas ; Katarzyna Tkacz-Ś ; miech ; Konstanty Marszał ; ek
- 关键词：RF PA CVD ; Plasma technology ; a-C ; N ; H layers ; Carbon nitride ; Infrared spectroscopy
- 刊名：Vacuum
- 出版年：2008
- 期刊代码：83_0042207x
- 类别：ph
- 出版时间：3 June 2008
- 卷：82
- 期：10
- 页码：998-1002
- 文件大小：371 K
摘要
Results concerning influence of radio-frequency plasma-assisted chemical vapor deposition (RF PA CVD; 13.56 MHz) processing parameters on a-C:N:H layer deposition are presented in this work. The following parameters have been taken into consideration: substrate temperature, plasma RF generator power, composition of reactive gas mixture, gas pressure and time of deposition. A special interest has been focused on the deposition rate as well as on the structure and chemical composition of layers. The layer thicknesses have been measured and deposition rates evaluated. Structure analysis has been performed with application of FT-IR spectroscopy. The obtained results may serve as a basis in the design of the technology of a-C:N:H layers for various applications.