Low temperature deposition of TiB₂ by inductively coupled plasma assisted CVD

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• 作者：S.H. Lee ; K.H. Nam ; S.C. Hong ; J.J. Lee
• 关键词：Titanium diboride (TiB₂) ; Inductively coupled plasma ; CVD
• 刊名：Surface and Coatings Technology
• 出版年：2007
• 期刊代码：106_02578972
• 类别：ms
• 出版时间：26 February 2007
• 卷：201
• 期：9-11
• 页码：5211-5215
• 文件大小：975 K

摘要

Inductively coupled plasma (ICP) chemical vapor deposition (CVD) was used to deposit titanium diboride (TiB₂) films on H13 steel and (100) Si wafer substrate using a gas mixture of TiCl₄, BCl₃, H₂ and Ar. The effects of the ICP on the TiB₂ film properties were investigated. TiB₂ films with high hardness (> 40 GPa) could be prepared at relatively low temperatures (400–250 °C) using ICP. The hardness increased with the ICP power and gas flow ratio of TiCl₄/BCl₃. The film structure also changed from a (100) preferred orientation to a random orientation with increasing rf power. It is believed that the high hardness of the TiB₂ films resulted from the strong chemical bonding of the stoichiometric TiB₂ films, the nano-sized small grains of TiB₂.