Plasma process for development of a bulk heterojunction optoelectronic device: A highly sensitive UV detector

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• 作者：Shyamalima Sharma^a ; Arup R. Pal^a ; ^{arup_trip@yahoo.com} ; Joyanti Chutia^a ; Heremba Bailung^a ; Neelotpal S. Sarma^a ; Narendra N. Dass^a ; Dinkar Patil^b
• 关键词：52.77.Dq ; 52.80.Pi ; 81.07.Pr
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：1 August, 2012
• 卷：258
• 期：20
• 页码：7897-7906
• 文件大小：1706 K

摘要

Deposition of composite thin film of polyaniline/TiO₂ (PAni/TiO₂) has been carried out by a combined process of magnetron sputtering and plasma polymerization at a pressure of 5 脳 10^鈭? Torr using titanium as a target material for sputtering, aniline as monomer, oxygen as reactive gas and argon as carrier gas/ion source for sputtering. The deposition has been achieved using direct current (dc) discharge power of 35 W for sputtering and radio frequency (rf) power of 8-12 W at substrate bias values in the ranges of 鈭?0 to 鈭?00 V for polymerization. The composition of the film has been studied using infrared spectroscopy, Raman spectroscopy as well as X-ray photoelectron spectroscopy. The morphology of the film has been characterized with the help of a transmission electron microscopy and atomic force microscopy. The ultraviolet (UV) photo-stability of the composite film has been studied by exposing the film deposited on silicon substrate for different reaction times up to 1 h under UV radiation at wave length range of 280-400 nm with an intensity of 0.4 mW/cm². An organic/inorganic nanocomposite film based photovoltaic device has been developed. The device has an aluminum/composite/indium tin oxide sandwiched structure that shows strong photoresponse in ultraviolet region and hence the device has potential for application as an UV detector.