History dependent magnetoresistance in lightly doped La_{2鈭?span style='font-style: italic'>x}Sr_xCuO₄ thin films

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• 作者：Xiaoyan Shi^a ; Dragana Popovi&#263 ; ^a ; ^{dragana@magnet.fsu.edu} ; C. Panagopoulos^b ; ^c ; G. Logvenov^d ; A.T. Bollinger^d ; I. Bož ; ovi&#263 ; ^d
• 关键词：Cuprates ; Thin films ; Magnetotransport ; Charge dynamics
• 刊名：Physica B
• 出版年：2012
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：1 June, 2012
• 卷：407
• 期：11
• 页码：1915-1918
• 文件大小：398 K

摘要

The in-plane magnetoresistance (MR) in atomically smooth La_2鈭?em>xm>Sr_m>xm>CuO₄ thin films grown by molecular-beam-epitaxy was measured in magnetic fields m>Bm> up to 9 T over a wide range of temperatures m>Tm>. The films, with m>xm>=0.03 and m>xm>=0.05, are insulating, and the positive MR emerges at . The positive MR exhibits glassy features, including history dependence and memory, for all orientations of m>Bm>. The results show that this behavior, which reflects the onset of glassiness in the dynamics of doped holes, is a robust feature of the insulating state.