Radiation emission phenomena in bent silicon crystals: Theoretical and experimental studies with 120 GeV/c positrons

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• 作者：D. Lietti^a ; ^b ; ^{lietti.daniela@gmail.com} ; E. Bagli^c ; S. Baricordi^c ; A. Berra^a ; ^b ; D. Bolognini^a ; ^b ; P.N. Chirkov^d ; P. Dalpiaz^c ; G. Della Mea^e ; ^f ; D. De Salvador^f ; ^g ; S. Hasan^a ; ^b ; V. Guidi^c ; V.A. Maisheev^d ; A. Mazzolari^c ; M. Prest^a ; ^b ; E. Vallazza^h ; D. Vincenzi^c ; I.A. Yazynin^d
• 关键词：Channeling ; Volume reflection ; Radiation
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2012
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：15 July, 2012
• 卷：283
• 期：Complete
• 页码：84-92
• 文件大小：1559 K

摘要

The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results.