摘要
To analyze the electronic structure and optical properties of (N, Ga) codoped ZnO, the parameters such as band structure, density of states, dielectric constant, absorption and reflection spectra of pure ZnO, N-Ga and 2N-Ga codoped ZnO were calculated by using first-principle method based on DFT (Density Functional Theory). The results demonstrated that the band gap of (N, Ga) codoped ZnO narrows, and 2N-Ga codoping can obtain a high-quality and more stable p-type ZnO. Compared with pure ZnO, the real and imaginary part of dielectric function of (N, Ga) codoped ZnO move toward a lower energy side; in ultraviolet region, the absorption spectrum reduces greatly, and the blue shift of reflectivity spectrum is observed; while in infrared region, the reflectivity spectrum of 2N-Ga codoped ZnO is twice that of pure ZnO or N-Ga codoped ZnO. The results provided certain theoretical reference for the study of ZnO-based transparent conductive thin films.