Mechanisms of current conduction in Pt/BaTiO₃/Pt resistive switching cell

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• 作者：R.K. Pan^a ; T.J. Zhang^a ; ^{tj65zhang@yahoo.com.cn} ; J.Y. Wang^a ; J.Z. Wang^a ; D.F. Wang^a ; ^b ; M.G. Duan^a
• 关键词：Barium titanate ; Resistive switching ; Thin films ; Conduction mechanism ; Sputtering
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：30 March, 2012
• 卷：520
• 期：11
• 页码：4016-4020
• 文件大小：850 K

摘要

The 80-nm-thickness BaTiO₃ (BT) thin film was prepared on the Pt/Ti/SiO₂/Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO₂/Si structure was investigated using X-ray diffraction and scanning electron microscopy. The current-voltage characteristic measurements were performed. The bipolar resistive switching behavior was found in the Pt/BT/Pt cell. The current-voltage curves were well fitted in different voltage regions at the high resistance state (HRS) and the low resistance state (LRS), respectively. The conduction mechanisms are concluded to be Ohmic conduction and Schottky emission at the LRS, while space-charge-limited conduction and Poole-Frenkel emission at the HRS. The electroforming and switching processes were explained in terms of the valence change mechanism, in which oxygen vacancies play a key role in forming conducting paths.