Er diffusion into gallium nitride

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• 作者：Chen ; Chii-Chang ; Ting ; Yi-Sheng ; Lee ; Chien-Chieh ; Chi ; Gou-Chung ; Chakraborty ; Purushottam ; et. al.
• 关键词：GaN ; Rare earth ; Erbium ; Diffusion ; Ion implantation
• 刊名：Solid-State Electronics
• 出版年：2003
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：March, 2003
• 卷：47
• 期：3
• 页码：529-531
• 文件大小：95.7 K

摘要

In this study, we report the diffusion mechanism of Er in GaN and the optical properties of Er-diffused GaN. The diffusion coefficient has been measured by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. Erbium is also implanted into GaN to compare the photoluminescence (PL) characteristics. The PL emission of Er-diffused and implanted GaN can be observed in infrared region. The emission intensity efficiency related to the Er concentration distribution after the Er diffusion is discussed.