Band offset of the In₂S₃/indium tin oxide interface measured by X-ray photoelectron spectroscopy

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• 作者：M.R. Rajesh Menon^a ; ^c ; ¹ ; A. Mancini^b ; C. Sudha Kartha^c ; K.P. Vijayakumar^c ; A. Santoni^a ; ^{antonino.santoni@enea.it}
• 关键词：Indium sulfide ; Band offset ; Indium tin oxide ; Chemical spray pyrolysis ; X-ray photoelectron spectroscopy ; X-ray diffraction
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 July, 2012
• 卷：520
• 期：18
• 页码：5856-5859
• 文件大小：502 K

摘要

In₂S₃ thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical-chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In₂S₃/ITO interface has been determined by XPS resulting in a value of 1.9 卤 0.2 eV. Consequently, the conduction band offset has been estimated to be 1.0 卤 0.4 eV.