Infrared absorption and Raman spectroscopy studies of InSbBi layers grown by liquid phase epitaxy

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• 作者：S.C. Das ; T.D. Das ; S. Dhar ; ^{sdhar_25@yahoo.co.in}
• 关键词：Semiconducting III&ndash ; V materials ; Liquid phase epitaxy ; Bismuth compounds ; Energy dispersive X-ray ; Raman spectroscopy measurements
• 刊名：Infrared Physics and Technology
• 出版年：2012
• 期刊代码：70_13504495
• 类别：et
• 出版时间：July, 2012
• 卷：55
• 期：4
• 页码：306-308
• 文件大小：360 K

摘要

We report on the results of optical absorption and Raman spectroscopy measurements on InSbBi layers grown by liquid phase technique. A maximum Bi content of 0.4 at.%, as measured by energy dispersive X-ray (EDX) technique, is used in the experiments. Optical absorption measurements made on the samples indicate a room temperature energy band gap reduction up to about 6 meV with respect to undoped InSb layers grown by the same technique. Bi content calculated from this band gap reduction agrees with that obtained from EDX. A weak peak obtained at 152 cm^鈭? in the Raman spectrum of the material is identified with the longitudinal optical phonon mode of InBi. Further a mode at 140 cm^鈭? is observed due to isolated Bi atoms at the interstitial sites.