Photoluminescence of Bi<sub>4sub>Si<sub>3sub>O<sub>12sub>:Er<sup>3+sup> crystal excited in the commercial laser diode emission region
- 作者：A. Lira C. ; M.O. Ramí ; rez ; J. Garcí ; a Solé ; ; U. Caldiñ ; o
- 关键词：Erbium ; Er<sup>3+sup> ; Bi<sub>4sub>Si<sub>3sub>O<sub>12sub> ; Up-conversion
- 刊名：Optical Materials
- 出版年：2007
- 期刊代码：81_09253467
- 类别：ch
- 出版时间：February 2007
- 卷：29
- 期：6
- 页码：605-609
- 文件大小：199 K
摘要
The luminescence of Er<sup>3+sup> ions in Bi<sub>4sub>Si<sub>3sub>O<sub>12sub> has been investigated in the excitation spectral range corresponding to diode pumping (760–840 nm) under continuous wave laser excitation. In addition to the one photon infrared emission (<sup>4sup>I<sub>11/2sub> → <sup>4sup>I<sub>15/2sub>), up-converted luminescence in the green (<sup>2sup>H<sub>11/2sub>,<sup>4sup>S<sub>3/2sub> → <sup>4sup>I<sub>15/2sub>) and red (<sup>4sup>F<sub>9/2sub> → <sup>4sup>I<sub>15/2sub>) spectral regions are observed under excitation within the <sup>4sup>I<sub>9/2sub> state (795 nm). From a detailed analysis of cw experimental data it is inferred that such up-converted emissions can be attributed to a combination of excited state absorption and energy transfer up-conversion processes.