Nanosecond reversible solid state switches capable of handling MJ of energy

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• 作者：Renaud Metz^a ; ^b ; ^{renaud.metz@univ-montp2.fr} ; ^{renaud.metz@univ-lyon1.fr} ; Julien Pansiot^a ; Mehrdad Hassanzadeh^c
• 关键词：SnO2 ; Varistor ; Surge arrester
• 刊名：Journal of the European Ceramic Society
• 出版年：2012
• 期刊代码：53_09552219
• 类别：ms
• 出版时间：August, 2012
• 卷：32
• 期：10
• 页码：2443-2450
• 文件大小：500 K

摘要

The theoretical applicability of the Schottky thermionic emission model to electronic transport at tin dioxide grain boundaries is addressed. Firstly, the theoretical behaviour of the barrier height 蠒_(v) versus applied voltage V is determined for a single grain boundary. Next we predict the current density-voltage characteristics as a function of temperature, demonstrating good correlation between experimental and theoretical results. The model carried out has the advantage that it contains no adjustable parameters. Agreement with experimental results from optimised polycrystalline ceramics gives strong evidence for the double-depletion-layer/thermionic-emission model. Moreover, this study emphasises the importance of the direct large-bandgap of doped SnO₂ in surge-arrester applications, and gives credibility to the analogy between the apparent behaviour of doped SnO₂ and doped ZnO varistors. Doped polycrystalline tin oxide ceramic is the first material to compete with doped ZnO in the medium and high voltage applications for surge arresters.