摘要
We investigated the structural and magnetic properties of MnxGe1−x, with 0.02 mg src="http://www.sciencedirect.com/scidirimg/entities/2a7d.gif" alt="less-than-or-equals, slant" border=0> x mg src="http://www.sciencedirect.com/scidirimg/entities/2a7d.gif" alt="less-than-or-equals, slant" border=0> 0.1. The MnxGe1−x samples were grown on Ge(0 0 1)2 × 1 by molecular beam epitaxy, at a substrate temperature of 520 K. The samples were characterized in situ by reflection high-energy electron diffraction and ex situ by high-resolution transmission electron microscopy, energy dispersive X-ray reflectivity and magneto-optical Kerr effect. From microscopy images we evidenced on all samples the presence of Mn5Ge3 nanocrystallites in addition to the MnxGe1−x diluted magnetic semiconductor with an estimated Mn concentration x ≈ 1.5%. The size and the density of the Mn5Ge3 precipitates were found to increase with increasing the Mn concentration x. Magnetic analysis showed ferromagnetism with a Curie temperature of 280 K for all samples.