Damage tolerance of Tib>3b>SiCb>2b> to high energy iodine irradiation

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• 作者：Lei. Zhang^a ; Q. Qi^a ; L.Q. Shi^a ; ^{Lqshi@fudan.edu.cn} ; D.J. O&rsquo ; Connor^b ; B.V. King^b ; E.H. Kisi^c ; D.K. Venkatachalam^d
• 关键词：29.20.dk ; 61.80.Jh ; 78.70.Bj ; 81.05.Je
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 June, 2012
• 卷：258
• 期：17
• 页码：6281-6287
• 文件大小：1206 K

摘要

The microstructure of high fluence 2 MeV I²⁺ irradiated Tib>3b>SiCb>2b> has been studied by grazing incident X-ray diffraction (GIXRD) using synchrotron radiation. The shift and broadening of the observed diffraction peaks are due to a variety of defects ranging from atomic to micron scale in size. The observation of the surface micrograph reveals the microcrack formation at grain boundaries due to high irradiation damage. The Raman spectrum of Tib>3b>SiCb>2b> was measured and compared with that of TiCb>0.67b>. It was found that a TiC nanocrystalline phase was formed under the high dose irradiation. However, a complete decomposition by irradiation did not take place even at 10.3 dpa. Post irradiation annealing to temperatures of 500-800 掳C results in crystal regrowth of Tib>3b>SiCb>2b> and TiC phases.