Hydrostatic pressure and coupling-barrier effects on the cyclotron effective mass and Land茅 factor in GaAs-Ga_{1鈭?span style='font-style: italic'>x}Al_xAs double coupled quantum wells

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• 作者：J.R. Mejí ; a-Salazar ^{jrmejia3146@gmail.com}
• 刊名：Physica E
• 出版年：2012
• 期刊代码：139_13869477
• 类别：et
• 出版时间：April-May, 2012
• 卷：44
• 期：7-8
• 页码：1196-1201
• 文件大小：551 K

摘要

Coupling-barrier in between GaAs quantum wells and the applied hydrostatic pressure effects on the conduction electron cyclotron effective mass and Land茅 factor under a growth-direction applied magnetic field in strongly coupled and uncoupled GaAs-Ga_1鈭?em>xAl_xAs QWs are investigated. Numerical calculations are performed within the effective mass approximation and taking into account the anisotropy and non-parabolicity effects for the conduction-band electrons, by means of the Ogg-McCombe effective Hamiltonian. The system consists of two GaAs quantum wells connected by a Ga_1鈭?em>xAl_xAs barrier and surrounded by Ga_1鈭?em>yAl_yAs material. As a result, the behavior of the band parameters m^{鈦?/sup> and g as a function of the applied hydrostatic pressure are sensitive for 鈥渟mall鈥?values of the central barrier width L_B, and for large values the behavior occurs as in a single QW. The coupling-barrier effect is studied by varying the Al concentration in the central barrier, after finding that there is a value of the Al concentration for which the cyclotron effective mass m鈦?/sup> and Land茅 factor converge to the same value due to the combined non-parabolicity, anisotropy and coupling-barrier effects.}