Lattice strain of B–B pairs formed by He irradiation in crystalline Sib>1−xb>Bb>xb>/Si

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• 作者：G. Bisognin ; D. De Salvador ; E. Napolitani ; A. Carnera ; L. Romano ; A.M. Piro ; S. Mirabella ; M.G. Grimaldi
• 关键词：B ; High resolution X-ray diffraction ; Ion channelling ; B clustering ; Crystalline Si
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2006
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：December 2006
• 卷：253
• 期：1-2
• 页码：55-58
• 文件大小：343 K

摘要

This work reports on the lattice strain induced by small B clusters in Si produced by He irradiation of an epitaxial layer uniformly doped with substitutional B. By means of high resolution X-ray diffraction measurements and nuclear reaction analysis, lattice strain profiles and B lattice location of the sample before and after He irradiation were extracted, respectively. We found that, as a consequence of He irradiation, all B atoms form B–B pairs, and the tensile strain status of the as-grown B-doped layer lowers by a factor of about 2. Moreover, the volume lattice expansion ΔV per clustered B atom was found to be (−(10.0 ± 0.6) ų). This negative value of ΔV is very different from the positive one (+(3.7 ± 0.6) ų) found for B clusters created as a consequence of the B interaction with self-interstitials produced by Si implantation and subsequent annealing [G. Bisognin, D. De Salvador, E. Napolitani, A. Carnera, E. Bruno, S. Mirabella, F. Priolo, A. Mattoni, Semicond. Sci. Technol. 21 (2006) L41]. The opposite sign of this volume lattice expansion suggests that a strong correlation exists between the atomistic structures associated with these two types of complexes and the lattice strain that they induce in the Si lattice.