摘要
The influence of substrate temperature, oxygen activity of the ambient gas, and substrate type on the growth morphology, phase selection, and epitaxy of thin films in the LaTiOb>xb> (x≈3.0 or 3.5) family were investigated. The films were deposited using pulsed laser deposition (PLD) from a Lab>2b>Tib>2b>Ob>7b> target and were characterized using X-ray diffraction. In oxygen atmospheres, coupled with high deposition temperatures and use of (1 1 0)-oriented SrTiOb>3b> substrates, the growth of epitaxial films of (1 1 0)-layered perovskite Lab>2b>Tib>2b>Ob>7b> is observed. However, under similar deposition conditions, on SrTiOb>3b>(1 0 0) substrates, no crystalline peaks were observed even at the higher temperatures. The reduction of Ti4+ to Ti3+ was achieved by the use of nitrogen atmospheres. This resulted in the formation of the cubic perovskite LaTiOb>3b>, on SrTiOb>3b>(1 1 0), SrTiOb>3b>(1 0 0), and LaAlOb>3b>(1 0 0) substrates.