Growth and structural characterization of epitaxial Bab>0.6b>Srb>0.4b>TiOb>3b> films deposited on REScOb>3b>(1 1 0) (RE=Dy, Gd) substrates using pulsed laser depo

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• 作者：Hui Du ; Patrick J. Fisher ; Marek Skowronski ; Paul A. Salvador ; O. Maksimov
• 关键词：A1. Defects ; A3. Pulsed laser deposition ; B1. Barium strontium titanate ; B1. Perovskites ; B1. REScOb>3b> (RE=Dy ; Gd) ; B2. Dielectric materials
• 刊名：Journal of Crystal Growth
• 出版年：2008
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：April 2008
• 卷：310
• 期：7-9
• 页码：1991-1998
• 文件大小：577 K

摘要

Bab>0.6b>Srb>0.4b>TiOb>3b> films were deposited by pulsed laser deposition on orthorhombic REScOb>3b>(1 1 0) (RE=Dy, Gd) single-crystal substrates. Films were investigated for their growth mode, crystalline quality, and strain states. Substrates were treated prior to growth to produce atomically flat surfaces having wide terraces (≈200 nm) and clear unit-cell-high steps. Atomic force microscopy and reflection high-energy electron diffraction indicated that the films grew epitaxially in a two-dimensional (2D) layer-by-layer mode. X-ray diffraction showed that all films (200 nm thick and less) were coherently/orthorhombically strained to the substrate according to the epitaxial relationship: (0 0 1)b>filmb>border="0">(1 1 0)b>substrateb>; [1 0 0]b>filmb>border="0">[0 0 1]b>substrateb> (and [0 1 0]b>filmb>border="0">[1 1¯ 0]b>substrateb>). (0 0 2) rocking curves were 17 and 20 arcsec wide for films grown on RE=Dy and Gd, respectively.These films have rocking curve widths and dislocation densities that are several orders of magnitude lower than a film grown on SrTiOb>3b> (0 0 1).