Structural characterisation of GaAlN/GaN HEMT heterostructures

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• 作者：N. Sarazin ; O. Dur ; M. Magis ; M.-A. di Forte Poisson ; J. Di Persio
• 关键词：X-ray reflectometry ; GaAlN/GaN heterostructures ; High electron mobility transistors ; Thickness determination ; Fourier inversion method
• 刊名：Applied Surface Science
• 出版年：2006
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：31 October 2006
• 卷：253
• 期：1
• 页码：228-231
• 文件大小：607 K

摘要

(GaN/GaAlN/GaN)//Al₂O₃(00.1) HEMT heterostructures have been studied by X-ray scattering techniques, transmission electron microscopy and atomic force microscopy. X-ray reflectometry has been used to determine with a high accuracy both the individual layer thicknesses and the interfacial roughness, in spite of the weak electronic density contrast between layers. From the Fourier inversion method and using a simulation software, the roughness of the interface corresponding to the two-dimensional electron gas location has been determined equal to 0.5 nm. Both high resolution X-ray diffraction and transmission electron microscopy experiments have shown the excellent crystallinity of the heterostructures. Finally, the surface morphology has been inferred using atomic force microscopy experiments.