Growth and characterization of CdTe:Ge:Yb

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• 作者：N.V. Sochinskii ; E. Saucedo ; M. Abellan ; J. Rodrí ; guez-Ferná ; ndez ; P. Hidalgo ; J. Piqueras ; C.M. Ruiz ; V. Bermú ; dez ; E. Dié ; guez
• 关键词：A2. Bridgman technique ; A3. Vapor-phase epitaxy ; B1. CdTe ; B2. Semiconducting II– ; VI
• 刊名：Journal of Crystal Growth
• 出版年：2008
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：April 2008
• 卷：310
• 期：7-9
• 页码：2076-2079
• 文件大小：238 K

摘要

Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×10¹⁷ cm⁻³ and co-doped with the rare element Yb at the concentration range from 1×10¹⁷ to 1×10¹⁹ cm⁻³. The CdTe:Ge:Yb samples were studied by the structural and electrical characterization techniques, low-temperature photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and CL imaging.