Synthesis and characterization of Cu₂ZnSnS₄ thin films by SILAR method

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• 作者：Sawanta S. Mali^a ; ^{malisawantasubhash@gmail.com} ; Pravin S. Shinde^a ; Chirayath A. Betty^b ; Popatrao N. Bhosale^a ; Young Woo Oh^c ; Pramod S. Patil^a ; ^{psp_phy@unishivaji.ac.in} ; ^{icnama2008@gmail.com}
• 关键词：A. Semiconducting ; B. Chemical synthesis ; C. X-ray diffraction ; D. Electrochemical properties
• 刊名：Journal of Physics and Chemistry of Solids
• 出版年：2012
• 期刊代码：69_00223697
• 类别：ch
• 出版时间：June, 2012
• 卷：73
• 期：6
• 页码：735-740
• 文件大小：944 K

摘要

Semiconducting Cu₂ZnSnS₄ (CZTS) material has been receiving a great technological interest in the photovoltaic industry because of its low-cost non-toxic constituents, ideal direct band gap as a absorber layer and high absorption coefficient. CZTS thin films have been successfully deposited onto the fluorine-doped tin oxide/glass (glass/FTO) substrates coated glass substrates using successive ionic layer adsorption and reaction (SILAR) method and investigated for photoelectrochemical conversion (PEC) of light into electricity. The best solar cell sample showed an open-circuit voltage of 390 mV, a short-circuit current density of 636.9 渭A/cm², a fill factor of 0.62 and an efficiency of 0.396%under irradiation of 30 mW/cm². Preliminary results obtained for solar cells fabricated with this material are promising.