Electrical switching behavior of bulk Cu_x(AsSe_1.4I_0.2)_{100鈭?span style='font-style: italic'>x} glasses: Composition dependence and topological effects

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• 作者：Milo&scaron ; P. Slankamenac^a ; ^{miloss@uns.ac.rs} ; Svetlana R. Luki膰-Petrovi膰^b ; Milo&scaron ; B. 沤ivanov^a ; Kristina 膶ajko^b
• 关键词：A. Chalcohalide glasses ; D. Electrical switching ; D. Electronic transport
• 刊名：Solid State Communications
• 出版年：2012
• 期刊代码：101_00381098
• 类别：ms
• 出版时间：July, 2012
• 卷：152
• 期：13
• 页码：1160-1163
• 文件大小：294 K

摘要

The objective was to study the static current-voltage characteristics and electrical switching properties of the bulk metal chalcogenide glasses Cu_x(AsSe_1.4I_0.2)_100鈭?em>x (1鈮?em>x鈮?5). The obtained results clearly indicate that all the studied glasses exhibit current-controlled negative resistance behavior and memory switching. The composition dependence of the switching field (E_th) was found to decrease with the increase in copper content and a change in the slope occurs for the compositions with x=5 and 20. The slope change in E_th versus x was identified using two network topological effects, namely, the rigidity percolation threshold and the chemical threshold.