Formation of intermetallics by ion implantation of multilatered Al/Ti nano-structures

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• 作者：D. Peru&scaron ; ko^a ; ^{dperusko@vinca.rs} ; S. Petrovi膰^a ; M. Stojanovi膰^a ; M. Mitri膰^a ; M. 膶izmovi膰^a ; M. Panjan^b ; M. Milosavljevi膰^a
• 关键词：Multilayer ; Ion implantation ; Al&ndash ; Ti intermetallics ; Nano-hardness
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2012
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：1 July, 2012
• 卷：282
• 期：Complete
• 页码：4-7
• 文件大小：474 K

摘要

The effects of Ar⁺ ion irradiation on Al/Ti multilayers at room temperature were investigated. Eight (Al/Ti) bilayers were deposited by d.c. ion sputtering on (1 0 0) Si wafers to a total thickness of 鈭?00 nm. Ion irradiations were performed by 180 keV Ar⁺ ions with doses 1-6 脳 10¹⁶ ions cm^鈭?. After implantation the samples were vacuum annealed at 400 ^oC for 30 min. Ion irradiations induced intermixing of layer constituents, and for the highest fluence formation of AlTi and AlTi₃ intermetallic phases in the vicinity of the mid projected range of the impact ions. Subsequent vacuum annealing of sample implanted to 6 脳 10¹⁶ ions cm^鈭? lead to transformation of all deposited layers into AlTi₃ and 纬-AlTi intermetallic phases, except for 3-4 layers close to the substrate which were out of range of the effects induced by ion implantation. It is assumed that Al-Ti reaction was initiated by thermal spikes and further enhanced by chemical driving forces, but only in the intermixed region. This procedure may be interesting for fabrication of Al-Ti intermetallic compounds tightly adhered on different substrates.