XRD, SEM and photoelectrochemical characterization of ZnSe electrodeposited on Cu and Cu-Sn substrates

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• 作者：Remigijus Ju&scaron ; k臈nas¹ ; ^{juskenas@ktl.mii.lt} ; Darius Avi啪inis ; Putinas Kalinauskas ; Algirdas Selskis¹ ; Raimondas Giraitis ; Vidas Pak&scaron ; tas ; Violeta Karpavi膷ien臈 ; Stas臈 Kanapeckait臈 ; Zenius Mockus ; Rokas Kondrotas
• 关键词：Electrodeposition ; Zinc selenide ; Photoelectrochemical response ; XRD
• 刊名：Electrochimica Acta
• 出版年：2012
• 期刊代码：30_00134686
• 类别：ch
• 出版时间：30 May, 2012
• 卷：70
• 期：Complete
• 页码：118-123
• 文件大小：931 K

摘要

XRD, SEM and photoelectrochemical examinations of deposits formed on the Cu substrate by electrochemical deposition in a water solution containing 0.2 mol dm^鈭? of ZnSO₄ and 0.002 mol dm^鈭? of H₂SeO₃ were performed. Formation of Cu₂Se_x at potentials positive to that of electrochemical deposition of ZnSe was proved by the XRD technique. The formation of Cu₂Se_x continued even after deposition due to further diffusion of the deposited Se into Cu. A nano-crystalline ZnSe of cubic structure was electrodeposited at a potential of 鈭?.62 V vs. Ag/AgCl electrode and XRD examination of deposits formed using cyclic potential scanning and pulse plating revealed the presence of hexagonal ZnSe along with the cubic one. A photoelectrochemical characterization proved that the electrodeposited ZnSe was a p-type semiconductor. A significant amount of Cu₂Se_x was formed during annealing of ZnSe electrodeposited on the Cu substrate although only traces of copper selenide were detected before the annealing. ZnSe, SnSe and a small quantity of Cu₂Se_x were detected by XRD after annealing of ZnSe electrodeposited on the Cu-Sn/Mo/glass substrate.