A two-step approach for electrochemical deposition of Cu-Zn-Sn and Se precursors for CZTSe solar cells

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• 作者：Remigijus Ju&scaron ; k臈nas ; ^{juskenas@ktl.mii.lt} ; Stas臈 Kanapeckait臈 ; Violeta Karpavi膷ien臈 ; Zenius Mockus ; Vidas Pak&scaron ; tas ; Au&scaron ; ra Selskien臈 ; Raimondas Giraitis ; Gediminas Niaura
• 关键词：Cu2ZnSnSe4 ; Kesterite ; Electrodeposition ; Photovoltaics
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 期刊代码：81_09270248
• 类别：ce
• 出版时间：June, 2012
• 卷：101
• 期：Complete
• 页码：277-282
• 文件大小：917 K

摘要

A two-step electrochemical route for fabrication of Cu-Zn-Sn (CZT) and Se precursors' layers for a thin film Cu₂ZnSnSe₄ (CZTSe) absorber for solar cells is demonstrated. The CZT was electrochemically co-deposited in a citrate solution and after that an appropriate amount of Se was electrodeposited on the top. The CZT+Se were annealed in Ar atmosphere using a slow or fast increase in temperature up to 500 掳C. SEM with EDX, XRD and Raman spectroscopy examinations of precursors and of the manufactured CZTSe thin films were carried out. The XRD measurements indicated that the CZT precursor contained 畏-Cu_6.26Sn₅, Sn and 纬-CuZn₅ phases. The electrodeposited Se was polycrystalline with a hexagonal structure. The manufactured CZTSe in all the cases presented Cu₂ZnSnSe₄ with kesterite or partially disordered kesterite structure; however a purer CZTSe phase was formed using the fast increase in the annealing temperature.