Electron Raman scattering in asymmetrical multiple quantum wells system with an external electric field

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• 作者：Ri. Betancourt-Riera^a ; Re. Betancourt-Riera^a ; ^b ; R. Riera^b ; R. Rosas^c ; ^{rosas@correo.fisica.uson.mx}
• 刊名：Physica E
• 出版年：2012
• 期刊代码：139_13869477
• 类别：et
• 出版时间：April-May, 2012
• 卷：44
• 期：7-8
• 页码：1152-1157
• 文件大小：577 K

摘要

The differential cross-section for an electron Raman scattering process in a semiconductor multiple GaAs/AlGaAs quantum well with the presence of an external uniform electric field is calculated for T=0 K. We assume single parabolic conduction band with one electron. The emission spectra and the effect for different electric field values are discussed. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems.