Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films

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• 作者：Qingyu Xu ; Lars Hartmann ; Heidemarie Schmidt ; Holger Hochmuth ; Michael Lorenz ; Rü ; diger Schmidt-Grund ; Daniel Spemann ; Andreas Rahm ; Marius Grundmann
• 关键词：Dilute magnetic semiconductor ; Ferromagnetism ; Magnetoresistance ; Zinc oxide ; Doped II– ; VI semiconductors
• 刊名：Thin Solid Films
• 出版年：2006
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：5 December 2006
• 卷：515
• 期：4
• 页码：2549-2554
• 文件大小：276 K

摘要

ZnO films with different 3d transition metal doping (Ti, Co, Mn) were prepared by pulsed laser deposition. The occurrence of positive magnetoresistance (MR) was studied in dependence on temperature. Large positive MR was observed in Co- and Mn-doped ZnO films at 5 K. Zn_0.98Mn_0.02O films show a positive MR up to  31%at 5 K. The positive MR for Co- and Mn-doped ZnO films decreases drastically from 5 K to 50 K. Positive MR was also observed in Zn_0.9998Ti_0.0002O films at 290 K, while negative MR was observed at 5 K. Clear stripe-like magnetic domain pattern was observed by magnetic force microscopy for the Zn_0.9998Ti_0.0002O films, indicating the possible ferromagnetism at room temperature due to Ti³⁺-ions in a polarized spin state.