A comparison between ZnO films doped with 3d and 4f magnetic ions

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• 作者：Mariana Ungureanu ; Heidemarie Schmidt ; Holger von Wenckstern ; Holger Hochmuth ; Michael Lorenz ; Marius Grundmann ; Marian Fecioru-Morariu ; Gernot Gü ; ntherodt
• 关键词：Diluted magnetic semiconductors ; ZnO
• 刊名：Thin Solid Films
• 出版年：2007
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：15 October 2007
• 卷：515
• 期：24
• 页码：8761-8763
• 文件大小：255 K

摘要

We present electrical and magnetic properties of ZnO films doped with 3d (Mn) and 4f (Gd or Nd) magnetic ions grown on a-plane Al₂O₃ substrates. Both for films doped with 3d magnetic ions and for films doped with 4f magnetic ions, Hall investigations revealed that the carrier concentration decreases and the resistivity increases with increasing the oxygen partial pressure during the pulsed laser deposition growth, probably because the formation of oxygen vacancies is hindered. Measurements of magnetic properties revealed ferromagnetism above room temperature with magnetic moments up to 0.2 μ_B/Mn ion in insulating ZnO:Mn films co-doped with 0.1%P and up to 0.3 μ_B/Gd ion in n-conducting ZnO:Gd films co-doped with 0.2%Al.