A general method for the calculation of segregation profiles in floating zone grown silicon ingots with non-uniform initial distribution of the solute
- 作者：Hans-Christof Freiheit ; Kurt Bonauer-Klepp ; Robert Baumann
- 关键词：A1. Doping ; A1. Segregation ; A2. Floating zone technique ; B2. Semiconducting silicon
- 刊名：Journal of Crystal Growth
- 出版年：2007
- 期刊代码：49_00220248
- 类别：ch
- 出版时间：15 June 2007
- 卷：304
- 期：2
- 页码：317-323
- 文件大小：296 K
摘要
In polycrystalline silicon analytics segregation effects related to radial non-uniform dopant distributions are of major importance for the interpretation of resistivity data. The determination of dopant concentrations and resistivity profiles in polycrystalline silicon inevitably requires the transformation into a single crystal. Neglecting segregation effects may therefore substantially bias the actual material properties.
A tool for the computation of final concentration profiles in floating zone grown ingots with non-uniform initial distributions has been developed, which allows the re-calculation of polysilicon data from single crystal data.